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IPT009N06NM5ATMA1
INFINEON - IPT009N06NM5ATMA1 - Power MOSFET, N Channel, 60 V, 427 A, 900 µohm, HSOF, Surface Mount
Category
Infineon
Mfr Part #
Mfr
Infineon Technologies
Life Cycle
STOCKED
EVALIHR5IPBAV1TOBO1
INFINEON - EVALIHR5IPBAV1TOBO1 - Evaluation Board, IEWS20R5135IPB, Single-Ended Parallel-Resonant (SEPR) Converter
IPB80N03S4L03ATMA1
INFINEON - IPB80N03S4L03ATMA1 - Power MOSFET, N Channel, 30 V, 80 A, 3000 µohm, TO-263 (D2PAK), Surface Mount
NO_LONGER_MANUFACTURED
IPB120P04P4L03ATMA1
INFINEON - IPB120P04P4L03ATMA1 - Power MOSFET, P Channel, 40 V, 120 A, 3100 µohm, TO-263 (D2PAK), Surface Mount
BTS142DATMA1
INFINEON - BTS142DATMA1 - Smart Power Switch, SIPMOS Technology, Low Side, 1 Output, 10V, 45A, TO-252-3
TD330N16KOFHPSA2
INFINEON - TD330N16KOFHPSA2 - THYRISTOR/DIODE MODULE, 1.6KV, 520A
IPB60R045P7ATMA1
INFINEON - IPB60R045P7ATMA1 - Power MOSFET, N Channel, 600 V, 61 A, 0.038 ohm, TO-263 (D2PAK), Surface Mount
FF900R12IP4BOSA2
INFINEON - FF900R12IP4BOSA2 - IGBT Module, Dual, 900 A, 1.7 V, 5.1 kW, 150 °C, Module
2ED300C17SROHSBPSA1
INFINEON - 2ED300C17SROHSBPSA1 - Development Board, EiceDriver Safe IGBT Gate Driver, Galvanic Isolated, 2-Channel
TLD40203STDEVALTOBO1
INFINEON - TLD40203STDEVALTOBO1 - Evaluation Board, TLD4020-3ET, 7 to 29V in, 3O/P, 0.0515A Out, Low-Side Linear
GS0650111LTRXUMA1
INFINEON - GS0650111LTRXUMA1 - Gallium Nitride (GaN) Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Surface Mount
TLE4998C8DXUMA2
INFINEON - TLE4998C8DXUMA2 - Hall Effect Sensor, TDSO, 8 Pins, 4.1 V, 16 V, -40 °C
IPL60R075CFD7AUMA1
INFINEON - IPL60R075CFD7AUMA1 - Power MOSFET, N Channel, 600 V, 33 A, 0.066 ohm, VSON, Surface Mount
IPB80P03P4L04ATMA1
INFINEON - IPB80P03P4L04ATMA1 - Power MOSFET, P Channel, 30 V, 80 A, 3400 µohm, TO-263 (D2PAK), Surface Mount
IPB80P04P4L04ATMA2
INFINEON - IPB80P04P4L04ATMA2 - Power MOSFET, P Channel, 40 V, 80 A, 3800 µohm, TO-263 (D2PAK), Surface Mount
IPB80P04P4L04ATMA1
INFINEON - IPB80P04P4L04ATMA1 - Power MOSFET, P Channel, 40 V, 80 A, 3800 µohm, TO-263 (D2PAK), Surface Mount
IPD90P04P4L04ATMA2
INFINEON - IPD90P04P4L04ATMA2 - Power MOSFET, P Channel, 40 V, 90 A, 4300 µohm, TO-252 (DPAK), Surface Mount
IPG20N04S4L08ATMA1
INFINEON - IPG20N04S4L08ATMA1 - Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 7200 µohm
IPB80P04P4L08ATMA2
INFINEON - IPB80P04P4L08ATMA2 - Power MOSFET, P Channel, 40 V, 80 A, 6500 µohm, TO-263 (D2PAK), Surface Mount
IGC025S08S1XTMA1
INFINEON - IGC025S08S1XTMA1 - Gallium Nitride (GaN) Transistor, 80 V, 86 A, 2500 µohm, 12 nC, TSON, Surface Mount
IPLK80R1K4P7ATMA1
INFINEON - IPLK80R1K4P7ATMA1 - Power MOSFET, N Channel, 800 V, 4 A, 1.2 ohm, ThinPAK 5x6, Surface Mount
FF1400R17IP4BOSA1
INFINEON - FF1400R17IP4BOSA1 - IGBT Module, Dual, 1.4 kA, 1.75 V, 9.55 kW, 150 °C, Module
TLE7181EMXUMA1
INFINEON - TLE7181EMXUMA1 - MOSFET Driver, H- Bridge, Dual Half Bridge, 7 V to 34 V supply, 13.5 V out, 250 ns /200 ns, SSOP-24
IPG20N04S4L07ATMA1
INFINEON - IPG20N04S4L07ATMA1 - Power MOSFET, N Channel, 40 V, 20 A, 6500 µohm, TDSON, Surface Mount
KITIM68D128BV01FLEXTOBO1
INFINEON - KITIM68D128BV01FLEXTOBO1 - Flex Evaluation Kit, IM68D128BV01, MEMS Microphone
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